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Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC

MALVERN, Pa. — Jan. 29, 2025 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.

The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Device Specification Table:

Part Number

VR
(V)

IF(AV)
(A)

VF at
IF (V)

IFSM
(A)

QC
(nC)

Configuration

VS-SC40FA65

650

40

1.36

105

56¹

Two separate diodes, parallel pin-out

VS-SC80FA65

80

1.36

225

110¹

Two separate diodes, parallel pin-out

VS-SC120FA65

120

1.39

340

164¹

Two separate diodes, parallel pin-out

VS-SC160FA65

160

1.38

450

220¹

Two separate diodes, parallel pin-out

VS-SC200FA65

200

1.39

555

275¹

Two separate diodes, parallel pin-out

VS-SC240FA65

240

1.40

675

328¹

Two separate diodes, parallel pin-out

VS-SC50BA65

50

1.50

267

110¹

Single phase bridge

VS-SC90BA65

90

1.61

340

164¹

Single phase bridge

VS-SC40FA120

1200

40

1.39

130

112²

Two separate diodes, parallel pin-out

VS-SC80FA120

80

1.4

260

224²

Two separate diodes, parallel pin-out

VS-SC120FA120

120

1.42

385

333²

Two separate diodes, parallel pin-out

VS-SC160FA120

160

1.44

500

444²

Two separate diodes, parallel pin-out

VS-SC200FA120

200

1.45

620

553²

Two separate diodes, parallel pin-out

VS-SC240FA120

240

1.45

690

651²

Two separate diodes, parallel pin-out

VS-SC50BA120

50

1.5

328

223²

Single phase bridge

VS-SC90BA120

90

1.9

500

332²

Single phase bridge

¹VR = 400 V
²VR = 800 VSamples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks. Pricing for U.S. delivery only starts at $60 per piece.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

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