Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si
Leuven, Belgium – May 26, 2011 – Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers. With these wafers, functional GaN MISHEMTs were processed using standard CMOS tools. The used processes are compatible with the strict contamination rules in a standard CMOS processing line (e.g. no use of gold). These first GaN devices on 200mm wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200mm fabs.
GaN is a promising material for next-generation power devices with … Read More → "Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si"