Micron Announces Sample Availability for Its Third-Generation RLDRAM(R) Memory
BOISE, Idaho, 2011-05-26 06:15 CEST (GLOBE NEWSWIRE) — Micron Technology, Inc., (Nasdaq:MU) today announced that early engineering samples are available for its third-generation reduced latency DRAM (RLDRAM 3 memory). RLDRAM 3 is a high-bandwidth memory technology that enables a more efficient transfer of information across the network. Designed for high-performance networking applications, including high-end routers and switches that require back-to-back READ/WRITE operations or completely random access, RLDRAM 3 memory is an ideal choice for 40 Gigabit Ethernet (GbE) and 100 GbE designs, packet buffering and inspection, and lookup tables. Additionally, RLDRAM 3 memory offers significant improvements in speed, density, latency and power consumption. & … Read More → "Micron Announces Sample Availability for Its Third-Generation RLDRAM(R) Memory"