TORRANCE, CA – October 28th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12^th– 15^th).

Aligned with the mission to ‘Electrify our World™’, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO₂ by 2050.

Major technology updates include the world’s first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.

Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.

Also on display will be the company’s latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS.

In addition to the exhibition, the company’s Llew Vaughan-Edmunds will take part in the EETimes panel debate ‘SiC & GaN Technologies – Exploring Advancements, Addressing Challenges’ (November 12^th, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies’ share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30% share of the power semi market by 2027.

electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12^th – 15^th. “Planet Navitas” is featured in Hall C3, booth #129.

To schedule a meeting with Navitas at electronica, email euro.sales@navitassemi.com

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.