Increased demand for convenient eco-friendly travel, mobile energy storage, and small power solutions, has driven rapid market developments. To improve battery safety and efficiency, battery protection system (BMS) technology needs further advancement – GaN technology supports this by improving efficiency, power density and thermal performance, improving the overall conversion efficiency of power systems. With no parasitic body diode and bidirectional control, one (1) innoscience’s bi-directional (VGaN) device can effectively replace two (2) traditional MOS Silicon pairs. Innoscience’s VGaN series brings these advantages to Over Voltage Protection (OVP) and BMS applications.

A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts Innoscience’s latest 100V VGaN product, the INV100FQ030A, which is packaged in a 4mm x 6mm² FCQFN and offers a maximum on-resistance of 3.2mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode.

Dr. Denis Marcon, General Manager, Innoscience Europe explains the benefits: “With just 16 VGaNs, we can replace 18 pairs of Silicon MOSFETs (36 in total), significantly reducing both the board area and system loop impedance. This optimization not only enhances performance and reduces system size but also drives down the overall system cost, making it a more efficient and cost-effective solution for battery protection systems”.

Innoscience’s 48V/180A high-side BMS solution is ideal for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design.

Innoscience, founded in 2015, is a global leader in the power semiconductor revolution, dedicated to innovation in the GaN power semiconductor industry and ecosystem. Innoscience is the world’s first company to achieve mass production of 8-inch GaN-on-Si wafers and the only company worldwide capable of providing a full voltage rage of GaN-on-Si semiconductor products at an industrial scale. Through innoscience’s relentless innovation and unparalleled technological leadership, innoscience designs, develops and manufactures high-performing and reliable GaN devices for a wide range of applications and voltages (30V-900V). Innoscience empowers customers in a wide range of fields, including consumer electronics, renewable energy and industrial applications, automotive electronics, and data centers.

For more information, please visit www.innoscience.com.