F-RAM (Ferroelectric RAM)

Highly reliable and low-power data logging memory with virtually unlimited endurance

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F-RAM (Ferroelectric RAM) memory solutions for critical data logging

F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that enables you to instantly capture and preserve critical data when power is interrupted. They are ideal for mission-critical data logging applications like high-performance programmable logic controllers (PLC) requiring high reliability control and throughput or life-enhancing patient monitoring devices. Designed in a low-power, small footprint, F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy efficiency.

  • Density: 4 Kb, 16 Kb, 64 Kb, 128 Kb, 256 Kb, 512 Kb, 1 Mb, 2 Mb, 4 Mb, 8 Mb, and 16 Mb
  • Interface: I2C, SPI, QSPI, and parallel (X8, X16)
Read more about Infineon's F-RAM here
Key features of Infineon's F-RAM memory

Infineon's F-RAM memory solutions offer a range of features, including: 

  • No delay Write, which writes data to memory cells at bus speed with no soak time. 
  • Ferroelectric memory products are highly durable and outlast floating-gate memories with over 100 trillion write cycles. 
  • Ultra-low power and consume 200x less energy than EEPROMs and 3000x less than NOR flash.
  • Radiation-tolerant and immune to soft errors caused by radiation that can produce bit flips.
Comprehensive portfolio of serial and parallel F-RAM memory solutions

Infineon offers a comprehensive portfolio of serial and parallel F-RAM non-volatile memories. Our standard F-RAMs are available in densities ranging from 4 Kb to 4 Mb. EXCELON™ is Infineon’s next generation of F-RAM memory. EXCELON™ F-RAM delivers the industry’s lowest-power non-volatile memory by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write cycle endurance, making it the ideal data logging memory for portable medical, wearable, IoT sensor, industrial, and automotive applications. They are available in densities ranging from 2 Mb to 16 Mb and support a 1.71 V to 1.89 V operating voltage range in addition to the wide-voltage 1.8 V to 3.6 V range.

Learn more about our EXCELON™ F-RAMs
Highly-reliable nonvolatile memory enabled by ferroelectric technology

F-RAM memories are built on ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in PZT change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of PZT is that it is not affected by power disruption, making F-RAM a reliable non-volatile memory. The underlying operation principle of F-RAM and its unique memory cell architecture impart specific advantages that set the technology apart from competing memory technologies like EEPROM or NOR flash.

Learn more about F-RAM technology here
F-RAM vs. other competing non-volatile memories

F-RAM, the industry’s most efficient non-volatile memory, consumes much lesser active currents than competing EEPROM and MRAM solutions. This makes F-RAMs suitable for battery operated devices such as wearables and medical implants.

In addition to lowest power consumption, F-RAM is also immune to external magnetic fields, thus enabling rewrites even after being exposed to a strong magnetic field. 

With a virtually unlimited endurance of 100 trillion cycles and instant non-volatility, F-RAMs outperform existing memories like EEPROM and NOR flash in several data logging applications.

Comparison between F-RAM vs other nvRAMs

F-RAM (Ferroelectric RAM) memory solutions for critical data logging

F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that enables you to instantly capture and preserve critical data when power is interrupted. They are ideal for mission-critical data logging applications like high-performance programmable logic controllers (PLC) requiring high reliability control and throughput or life-enhancing patient monitoring devices. Designed in a low-power, small footprint, F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy efficiency.

  • Density: 4 Kb, 16 Kb, 64 Kb, 128 Kb, 256 Kb, 512 Kb, 1 Mb, 2 Mb, 4 Mb, 8 Mb, and 16 Mb
  • Interface: I2C, SPI, QSPI, and parallel (X8, X16)
Read more about Infineon's F-RAM here

Key features of Infineon's F-RAM memory

Infineon's F-RAM memory solutions offer a range of features, including: 

  • No delay Write, which writes data to memory cells at bus speed with no soak time. 
  • Ferroelectric memory products are highly durable and outlast floating-gate memories with over 100 trillion write cycles. 
  • Ultra-low power and consume 200x less energy than EEPROMs and 3000x less than NOR flash.
  • Radiation-tolerant and immune to soft errors caused by radiation that can produce bit flips.

Comprehensive portfolio of serial and parallel F-RAM memory solutions

Infineon offers a comprehensive portfolio of serial and parallel F-RAM non-volatile memories. Our standard F-RAMs are available in densities ranging from 4 Kb to 4 Mb. EXCELON™ is Infineon’s next generation of F-RAM memory. EXCELON™ F-RAM delivers the industry’s lowest-power non-volatile memory by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write cycle endurance, making it the ideal data logging memory for portable medical, wearable, IoT sensor, industrial, and automotive applications. They are available in densities ranging from 2 Mb to 16 Mb and support a 1.71 V to 1.89 V operating voltage range in addition to the wide-voltage 1.8 V to 3.6 V range.

Learn more about our EXCELON™ F-RAMs

Highly-reliable nonvolatile memory enabled by ferroelectric technology

F-RAM memories are built on ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in PZT change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of PZT is that it is not affected by power disruption, making F-RAM a reliable non-volatile memory. The underlying operation principle of F-RAM and its unique memory cell architecture impart specific advantages that set the technology apart from competing memory technologies like EEPROM or NOR flash.

Learn more about F-RAM technology here

F-RAM vs. other competing non-volatile memories

F-RAM, the industry’s most efficient non-volatile memory, consumes much lesser active currents than competing EEPROM and MRAM solutions. This makes F-RAMs suitable for battery operated devices such as wearables and medical implants.

In addition to lowest power consumption, F-RAM is also immune to external magnetic fields, thus enabling rewrites even after being exposed to a strong magnetic field. 

With a virtually unlimited endurance of 100 trillion cycles and instant non-volatility, F-RAMs outperform existing memories like EEPROM and NOR flash in several data logging applications.

Comparison between F-RAM vs other nvRAMs

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