Wide band gap semiconductor materials are great choices for next generation power converter switches. In this episode of Chalk Talk, Amelia Dalton and Matthew Reynolds from Infineon explore the benefits and tradeoffs of GaN, silicon junction and silicon carbide power switching technology, the importance that body diode performance plays in these solutions and how you can take advantage of gallium nitride, silicon carbide, and silicon junction wide band gap power solutions in your next design.

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