Erfurt, Germany, July 15, 2010. X-FAB Silicon Foundries, the leading analog/mixed-signal foundry and expert in “More than Moore” technologies, today announced the industry’s first 100V high-voltage 0.35 micrometer foundry process. It enables a new class of reliable, high-performing battery monitoring and protection systems for lithium ion battery management. It also is ideal for power management applications and for ultrasonic imaging and inkjet print head apps using piezoelectric drivers. In addition, X-FAB added new and enhanced N- and P-type double-diffused metal-oxide-semiconductor (DMOS) transistors with 45 percent lower on-resistance for multiple operating voltages up to 100V, lowering the silicon footprint by up to 40 percent and thus reducing die costs. X-FAB will thoroughly discuss these new capabilities in a free webinar, “Addressing High-Voltage Applications with the Industry’s First 0.35 Micrometer 100V Pure-Play Foundry Process,” offered worldwide on July 27 and 28.

Jens Kosch, CTO at X-FAB, said, “The growing popularity of renewable energy sources for hybrid and electric cars, photo-voltaic cells and wind turbines mandates safe, high-performing energy storage management solutions. Using X-FAB’s new specialized high-voltage process, our customers can address these and other emerging applications that present significant growth potential, at lower costs. We see a lot of interest in power management solutions for lithium ion batteries by major car manufacturers around the world, for example. With X-FAB’s new HV process, they can achieve safer, higher performing battery monitoring and protection systems.”

Lower cost per function

X-FAB’s new and enhanced N- & P-type DMOS transistors with gate oxide thicknesses of 14nm or 40nm offer customers the choice of 5V or 12V drive capability for their applications with operating voltages of 55V, 75V and 100V. By considerably reducing the on-resistance, integrating into the baseline process an EEPROM function for trimming and program storage, and having a thick metal layer available as the third metal layer, X-FAB has lowered the cost per function significantly. In addition, newly added isolated 5V NMOS and PMOS devices can float between ground and the maximum operating voltage of 100V. Other device enhancements include Schottky diodes, 20V and 100V high-voltage capacitors, and bipolar transistors. 

Availability

All of the functions and devices mentioned above are available now as part of X-FAB’s 0.35 micrometer high-voltage process offering (XH035).

About X-FAB

X-FAB is the leading analog/mixed-signal foundry group manufacturing silicon wafers for analog-digital integrated circuits (mixed-signal ICs). X-FAB maintains wafer production facilities in Erfurt and Dresden (Germany), Lubbock, Texas (US) and Kuching, Sarawak (Malaysia), and employs approximately 2,400 people worldwide. Wafers are manufactured based on advanced modular CMOS and BiCMOS processes with technologies ranging from 1.0 to 0.18 micrometers for applications primarily in the automotive, communications, consumer and industrial sectors. For more information, please visit www.xfab.com

Albuquerque, New Mexico, July 2010 – Innovasic Semiconductor is pleased to announce the
availability of its new RapID™ Platform connectivity solution for EtherNet/IP adapters. The entire platform can be downloaded directly from the Innovasic website for a risk-free, no cost evaluation. This is not a demo version – it is fully functional and pre-tested for EtherNet/IP conformance including electronic schematics, bill of materials, and layout files, as well as all necessary software, stacks, and development environment. Evaluation of the RapID Platform download can be performed on hardware via the Internet or at the customer’s site.

“Innovasic’s RapID Platform provides quick and easy EtherNet/IP connectivity,” said Keith Prettyjohns, Innovasic’s CEO. “Engineers can download the entire platform, free of charge for evaluation. A one-time license fee applies only if the platform is used in production,” he added. The solution is centered on Innovasic’s fido® communication controller which handles all EtherNet/IP traffic. The RapID Platform can be used as a “network processor” alongside any host microcontroller. It can also be used as a standalone solution with the customer’s application running directly on the RapID Platform. All software is royalty-free with no hidden fees. The schematic has been carefully designed to provide robust, long-life, industrial-class performance at the lowest possible bill of material (BOM) cost. The Ethernet physical interface includes protection circuitry, bicolor LEDs, and magnetics integrated in the connector. The RapID Platform achieves an EtherNet/IP packet interval (RPI) of 1 ms and supports the full CIP Specification including Identity, Message Route, Assembly, Connection Manager, Ethernet Link, and TCP/IP Objects.

The EtherNet/IP version of the RapID Platform is now available on the Innovasic website. Please go to http://www.innovasic.com to learn more and to download the platform for a free evaluation.

Innovasic Semiconductor

Innovasic Semiconductor provides extended life semiconductor solutions for customers who have products with long life-cycles. The company’s processors, communication controllers and mixed signal devices are key components in industrial automation equipment, transportation systems, instrumentation, and medical devices. Innovasic’s newest System on a Chip (SoC) solutions enable customers to quickly integrate real-time Industrial Ethernet into their product lines at the lowest cost and with obsolescence protection. Extending the life of its customers’ products has established Innovasic as a trusted partner and an approved supplier to leading electronic system manufacturers worldwide. For more information on Innovasic Semiconductor, please visit http://www.innovasic.com.