industry news
Subscribe Now

Spin Transfer Technologies Develops 20nm Magnetic Tunnel Junction MRAM Technology at On-site R&D Fab

September 27, 2016 09:00 AM Eastern Daylight Time

FREMONT, Calif.–(BUSINESS WIRE)–Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today announced it has fabricated perpendicular MRAM magnetic tunnel junctions (MTJs) as small as 20nm — among the smallest MTJs reported — at its state-of-the-art development fab at the company’s Silicon Valley headquarters. The MTJ is the primary component of an MRAM memory cell and is the core technology of an MRAM device.

STT has had working ST-MRAM memory chips internally for some time, and based on requests from certain major semiconductor and systems companies, the company is now preparing to deliver fully functional samples to select customers. STT has moved its MRAM technology from R&D to commercialization largely on the strength of development done at its magnetics R&D fab, located at the company’s headquarters in Fremont, California. This R&D fab includes state-of-the-art process and analysis equipment, enabling the company to compress engineering development cycles to 10 days that otherwise would have taken several months.

“Since the beginning of the year, we’ve been able to process more than 40 wafer lots, an achievement that likely would have taken more than three years without our on-site R&D fab,” said Barry Hoberman, CEO of STT. “In just four years, STT has taken the journey from incubation to commercialization. We are excited to enter the next phase of the company’s evolution.”

STT’s patented OST-MRAM has the potential to replace major segments of the market for Flash, SRAM and DRAM semiconductors in applications such as mobile products, automotive, Internet of Things (IoT) and data storage. Compared with conventional spin transfer MRAM approaches, the STT OST-MRAM devices are expected to offer advantages in speed, power efficiency, cost, reliability and scalability. In addition, the company’s successful integration of magnetics and CMOS demonstrates the capability of the technology to operate in memory arrays with existing process standards and move quickly into high-volume production.

Initial samples of STT’s fully functional MRAM memories are targeted for non-volatile memory applications. The company is currently preparing evaluation boards to enable customers to fully evaluate the parameters of the memory.

STT’s development has been fueled by a venture capital structure led by Allied Minds, and to date, STT has received $108M in aggregate funding from its investors. This level of commitment has not only enabled STT to build its development fab, but also to assemble a world-class team of experts in the fields of magnetics and CMOS memory technology.

The STT leadership team also includes Chief Technology Officer and Senior Vice President of Magnetics Technology Mustafa Pinarbasi, a pioneer and innovator in magnetic thin films who spent nearly two decades as a leading technologist at IBM and Hitachi Global Storage Technologies (GST); Vice President of Memory Integration Amitay Levi, a 28-year veteran of advanced technology development in non-volatile memory; and Senior Vice President of IC Product Development Les Crudele, who has more than 40 years of experience in semiconductor development.

The company’s technology was originally developed from research conducted in the laboratory of Professor Andrew Kent at New York University. Spin Transfer Technologies was formed and incubated by Boston-based Allied Minds in 2007 and first attracted direct institutional investment in 2012.

More information about the company can be found at www.spintransfer.com.

Spin Transfer Technologies is a subsidiary of Boston-based Allied Minds (LSE: ALM).

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost, and scalability to smaller lithographic dimensions. For more information, visit www.spintransfer.com.

About Allied Minds

Allied Minds is a diversified holding company focused on venture creation within the life science and technology sectors. With unparalleled access to hundreds of university and federal labs across the U.S., Allied Minds forms, funds, and operates a portfolio of companies to generate long-term value for its investors and stakeholders. Based in Boston, with nationwide presence in Los Angeles and New York, Allied Minds supports its businesses with capital, central management, and shared services. For more information, please visit www.alliedminds.com.

Leave a Reply

featured blogs
Apr 24, 2024
Learn about maskless electron beam lithography and see how Multibeam's industry-first e-beam semiconductor lithography system leverages Synopsys software.The post Synopsys and Multibeam Accelerate Innovation with First Production-Ready E-Beam Lithography System appeared fir...
Apr 24, 2024
Diversity, equity, and inclusion (DEI) are not just words but values that are exemplified through our culture at Cadence. In the DEI@Cadence blog series, you'll find a community where employees share their perspectives and experiences. By providing a glimpse of their personal...
Apr 18, 2024
Are you ready for a revolution in robotic technology (as opposed to a robotic revolution, of course)?...

featured video

MaxLinear Integrates Analog & Digital Design in One Chip with Cadence 3D Solvers

Sponsored by Cadence Design Systems

MaxLinear has the unique capability of integrating analog and digital design on the same chip. Because of this, the team developed some interesting technology in the communication space. In the optical infrastructure domain, they created the first fully integrated 5nm CMOS PAM4 DSP. All their products solve critical communication and high-frequency analysis challenges.

Learn more about how MaxLinear is using Cadence’s Clarity 3D Solver and EMX Planar 3D Solver in their design process.

featured paper

Designing Robust 5G Power Amplifiers for the Real World

Sponsored by Keysight

Simulating 5G power amplifier (PA) designs at the component and system levels with authentic modulation and high-fidelity behavioral models increases predictability, lowers risk, and shrinks schedules. Simulation software enables multi-technology layout and multi-domain analysis, evaluating the impacts of 5G PA design choices while delivering accurate results in a single virtual workspace. This application note delves into how authentic modulation enhances predictability and performance in 5G millimeter-wave systems.

Download now to revolutionize your design process.

featured chalk talk

Secure Authentication ICs for Disposable and Accessory Ecosystems
Sponsored by Mouser Electronics and Microchip
Secure authentication for disposable and accessory ecosystems is a critical element for many embedded systems today. In this episode of Chalk Talk, Amelia Dalton and Xavier Bignalet from Microchip discuss the benefits of Microchip’s Trust Platform design suite and how it can provide the security you need for your next embedded design. They investigate the value of symmetric authentication and asymmetric authentication and the roles that parasitic power and package size play in these kinds of designs.
Jul 21, 2023
31,914 views