Plano, Texas – July 26, 2016 – Targeted at power systems that use redundancy to achieve high reliability in telecom, data center and server applications, the ZXGD3111N7 active OR-ing MOSFET controller from Diodes Incorporated increases performance with a 200V maximum drain voltage. This increase in VDRAIN from the previously announced 40V ZXGD3108N8 allows this latest device to address requirements in 48V common rail systems where the outputs of two or more power supplies are OR’ed together in order to provide redundancy.
In addition to its 200V rating, which is twice that of its competitors, the ZXGD3111N7 has a low turn?off threshold voltage with a tight tolerance of -5mV to -1mV. This improves stability under light load conditions when using low RDS(ON) MOSFETs, making this controller a class-leading solution that can deliver the highest efficiency and reliability over the entire load range.
The ZXGD3111N7 is designed to work with a FET to create an ideal diode that replaces the blocking diodes typically used in common rail designs. A 5A sink current capability allows fast discharge of the gates in the paralleled OR’ing MOSFETS and its quick <600ns turn-off specification avoids reverse current flow and any voltage drop on the common rail. The device has an industry-leading standby power consumption of <50mW with a quiescent supply current of <1mA.
The ZXGD3111N7 in an SO-7 package is priced at $1.10 at 2.5k. Further information is available at http://www.diodes.com
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with an additional facility located in Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.
